KSD1621RTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSD1621RTF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-F3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
500mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 75mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
2A
Transition Frequency
150MHz
Frequency - Transition
150MHz
RoHS Status
ROHS3 Compliant
KSD1621RTF Product Details
KSD1621RTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 2V.A VCE saturation (Max) of 400mV @ 75mA, 1.5A means Ic has reached its maximum value(saturated).In this part, there is a transition frequency of 150MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
KSD1621RTF Features
the DC current gain for this device is 100 @ 100mA 2V the vce saturation(Max) is 400mV @ 75mA, 1.5A a transition frequency of 150MHz
KSD1621RTF Applications
There are a lot of Rochester Electronics, LLC KSD1621RTF applications of single BJT transistors.