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KST5550MTF

KST5550MTF

KST5550MTF

Rochester Electronics, LLC

KST5550MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

KST5550MTF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 350mW
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 140V
Current - Collector (Ic) (Max) 600mA
Transition Frequency 100MHz
Frequency - Transition 300MHz
RoHS StatusROHS3 Compliant
In-Stock:1293 items

KST5550MTF Product Details

KST5550MTF Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 10mA 5V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 5mA, 50mA.As you can see, the part has a transition frequency of 100MHz.There is a 140V maximal voltage in the device due to collector-emitter breakdown.

KST5550MTF Features


the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
a transition frequency of 100MHz

KST5550MTF Applications


There are a lot of Rochester Electronics, LLC KST5550MTF applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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