KST5550MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KST5550MTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
350mW
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
140V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
100MHz
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant
KST5550MTF Product Details
KST5550MTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 10mA 5V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 5mA, 50mA.As you can see, the part has a transition frequency of 100MHz.There is a 140V maximal voltage in the device due to collector-emitter breakdown.
KST5550MTF Features
the DC current gain for this device is 60 @ 10mA 5V the vce saturation(Max) is 250mV @ 5mA, 50mA a transition frequency of 100MHz
KST5550MTF Applications
There are a lot of Rochester Electronics, LLC KST5550MTF applications of single BJT transistors.