MPS751RLRPG Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 1A 2V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -2A.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

MPS751RLRPG Features

the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 75MHz

MPS751RLRPG Applications

There are a lot of ON Semiconductor MPS751RLRPG applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface