MJD44H11 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJD44H11 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
20W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 2A 1V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
8A
Transition Frequency
85MHz
Frequency - Transition
85MHz
RoHS Status
Non-RoHS Compliant
MJD44H11 Product Details
MJD44H11 Overview
In this device, the DC current gain is 60 @ 2A 1V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.85MHz is present in the transition frequency.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
MJD44H11 Features
the DC current gain for this device is 60 @ 2A 1V the vce saturation(Max) is 1V @ 400mA, 8A a transition frequency of 85MHz
MJD44H11 Applications
There are a lot of Rochester Electronics, LLC MJD44H11 applications of single BJT transistors.