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MJD5731T4

MJD5731T4

MJD5731T4

Rochester Electronics, LLC

POWER BIPOLAR TRANSISTOR, PNP

SOT-23

MJD5731T4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.56W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA 10V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A
Voltage - Collector Emitter Breakdown (Max) 350V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 10MHz
RoHS Status Non-RoHS Compliant

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