MJE171 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJE171 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
12.5W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.7V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
3A
Transition Frequency
50MHz
Frequency - Transition
50MHz
RoHS Status
Non-RoHS Compliant
MJE171 Product Details
MJE171 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 600mA, 3A.As you can see, the part has a transition frequency of 50MHz.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
MJE171 Features
the DC current gain for this device is 50 @ 100mA 1V the vce saturation(Max) is 1.7V @ 600mA, 3A a transition frequency of 50MHz
MJE171 Applications
There are a lot of Rochester Electronics, LLC MJE171 applications of single BJT transistors.