MJF122 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJF122 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Additional Feature
UL RECOGNIZED
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Case Connection
ISOLATED
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 3A 3V
Current - Collector Cutoff (Max)
10μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3.5V @ 20mA, 5A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
5A
Transition Frequency
4MHz
RoHS Status
Non-RoHS Compliant
MJF122 Product Details
MJF122 Overview
In this device, the DC current gain is 2000 @ 3A 3V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The part has a transition frequency of 4MHz.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.
MJF122 Features
the DC current gain for this device is 2000 @ 3A 3V the vce saturation(Max) is 3.5V @ 20mA, 5A a transition frequency of 4MHz
MJF122 Applications
There are a lot of Rochester Electronics, LLC MJF122 applications of single BJT transistors.