MJH6284 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJH6284 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-218-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Case Connection
COLLECTOR
Power - Max
160W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 10A 3V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3V @ 200mA, 20A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
20A
Transition Frequency
4MHz
Frequency - Transition
4MHz
RoHS Status
Non-RoHS Compliant
MJH6284 Product Details
MJH6284 Overview
In this device, the DC current gain is 750 @ 10A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 200mA, 20A.A transition frequency of 4MHz is present in the part.Device displays Collector Emitter Breakdown (100V maximal voltage).
MJH6284 Features
the DC current gain for this device is 750 @ 10A 3V the vce saturation(Max) is 3V @ 200mA, 20A a transition frequency of 4MHz
MJH6284 Applications
There are a lot of Rochester Electronics, LLC MJH6284 applications of single BJT transistors.