MMBT2222AWT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MMBT2222AWT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
JESD-609 Code
e0
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
150mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic
300mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
300MHz
Frequency - Transition
300MHz
Turn Off Time-Max (toff)
285ns
Turn On Time-Max (ton)
35ns
RoHS Status
Non-RoHS Compliant
MMBT2222AWT1 Product Details
MMBT2222AWT1 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).300MHz is present in the transition frequency.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.
MMBT2222AWT1 Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 300mV @ 15mA, 150mA a transition frequency of 300MHz
MMBT2222AWT1 Applications
There are a lot of Rochester Electronics, LLC MMBT2222AWT1 applications of single BJT transistors.