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MMBT2222AWT1

MMBT2222AWT1

MMBT2222AWT1

Rochester Electronics, LLC

MMBT2222AWT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MMBT2222AWT1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 150mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic 300mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 600mA
Transition Frequency 300MHz
Frequency - Transition 300MHz
Turn Off Time-Max (toff) 285ns
Turn On Time-Max (ton) 35ns
RoHS Status Non-RoHS Compliant
MMBT2222AWT1 Product Details

MMBT2222AWT1 Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).300MHz is present in the transition frequency.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.

MMBT2222AWT1 Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 300mV @ 15mA, 150mA
a transition frequency of 300MHz

MMBT2222AWT1 Applications


There are a lot of Rochester Electronics, LLC MMBT2222AWT1 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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