MMBT8099LT1 Overview
In this device, the DC current gain is 100 @ 1mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Device displays Collector Emitter Breakdown (80V maximal voltage).
MMBT8099LT1 Features
the DC current gain for this device is 100 @ 1mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 150MHz
MMBT8099LT1 Applications
There are a lot of Rochester Electronics, LLC MMBT8099LT1 applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
