MPSA05RLRM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPSA05RLRM Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Packaging
Tape & Box (TB)
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
Non-RoHS Compliant
MPSA05RLRM Product Details
MPSA05RLRM Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.As a result, the part has a transition frequency of 100MHz.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
MPSA05RLRM Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 250mV @ 10mA, 100mA a transition frequency of 100MHz
MPSA05RLRM Applications
There are a lot of Rochester Electronics, LLC MPSA05RLRM applications of single BJT transistors.