MPSA28G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPSA28G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Power - Max
625mW
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
200MHz
Frequency - Transition
200MHz
RoHS Status
ROHS3 Compliant
MPSA28G Product Details
MPSA28G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 100mA 5V DC current gain.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).In this part, there is a transition frequency of 200MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MPSA28G Features
the DC current gain for this device is 10000 @ 100mA 5V the vce saturation(Max) is 1.5V @ 100μA, 100mA a transition frequency of 200MHz
MPSA28G Applications
There are a lot of Rochester Electronics, LLC MPSA28G applications of single BJT transistors.