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MSD42SWT1

  • MSD42SWT1
  • MSD42SWT1

MSD42SWT1

MSD42SWT1

Rochester Electronics, LLC

MSD42SWT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MSD42SWT1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 150mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 200mA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 150mA
RoHS Status Non-RoHS Compliant
MSD42SWT1 Product Details

MSD42SWT1 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 1mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 200mA.Detection of Collector Emitter Breakdown at 300V maximal voltage is present.

MSD42SWT1 Features


the DC current gain for this device is 25 @ 1mA 10V
the vce saturation(Max) is 500mV @ 2mA, 200mA

MSD42SWT1 Applications


There are a lot of Rochester Electronics, LLC MSD42SWT1 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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