DZT658-13 Overview
DC current gain in this device equals 40 @ 200mA 10V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As you can see, the part has a transition frequency of 50MHz.Input voltage breakdown is available at 400V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
DZT658-13 Features
the DC current gain for this device is 40 @ 200mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
DZT658-13 Applications
There are a lot of Diodes Incorporated DZT658-13 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
