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NP80N04NDG-S18-AY

NP80N04NDG-S18-AY

NP80N04NDG-S18-AY

Rochester Electronics, LLC

N-CHANNEL POWER MOSFET

SOT-23

NP80N04NDG-S18-AY Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package TO-262
Operating Temperature 175°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.8W Ta 115W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Drain to Source Voltage (Vdss) 40V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.84000 $1.84
500 $1.8216 $910.8
1000 $1.8032 $1803.2
1500 $1.7848 $2677.2
2000 $1.7664 $3532.8
2500 $1.748 $4370

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