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NTB52N10

NTB52N10

NTB52N10

Rochester Electronics, LLC

N-CHANNEL POWER MOSFET

SOT-23

NTB52N10 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Transistor Element Material SILICON
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN LEAD
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 52A
Drain-source On Resistance-Max 0.03Ohm
Pulsed Drain Current-Max (IDM) 156A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 800 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status Non-RoHS Compliant

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