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TN5415A

  • TN5415A
  • TN5415A

TN5415A

TN5415A

Rochester Electronics, LLC

TN5415A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

TN5415A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 1W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 200V
Current - Collector (Ic) (Max) 100mA
RoHS Status ROHS3 Compliant
TN5415A Product Details

TN5415A Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.When VCE saturation is 2.5V @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Collector Emitter Breakdown occurs at 200VV - Maximum voltage.

TN5415A Features


the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2.5V @ 5mA, 50mA

TN5415A Applications


There are a lot of Rochester Electronics, LLC TN5415A applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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