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TN5415A

TN5415A

TN5415A

Rochester Electronics, LLC

TN5415A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

TN5415A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
JESD-30 Code O-PBCY-T3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 1W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 200V
Current - Collector (Ic) (Max) 100mA
RoHS StatusROHS3 Compliant
In-Stock:2203 items

TN5415A Product Details

TN5415A Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.When VCE saturation is 2.5V @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Collector Emitter Breakdown occurs at 200VV - Maximum voltage.

TN5415A Features


the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2.5V @ 5mA, 50mA

TN5415A Applications


There are a lot of Rochester Electronics, LLC TN5415A applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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