2N4401T93 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.In extreme cases, the collector current can be as low as 600mA volts.
2N4401T93 Features
the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
2N4401T93 Applications
There are a lot of ROHM Semiconductor 2N4401T93 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
