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CP127-2N6301-CT

CP127-2N6301-CT

CP127-2N6301-CT

Central Semiconductor Corp

CP127-2N6301-CT datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CP127-2N6301-CT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature-65°C~200°C TJ
PackagingTray
Published 2017
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 4A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 3V @ 80mA, 8A
Collector Emitter Breakdown Voltage80V
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 8A
Frequency - Transition 4MHz
RoHS StatusROHS3 Compliant
In-Stock:1857 items

CP127-2N6301-CT Product Details

CP127-2N6301-CT Overview


This device has a DC current gain of 750 @ 4A 3V, which is the ratio between the base current and the collector current.When VCE saturation is 3V @ 80mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Die is the supplier device package for this product.The device has a 80V maximal voltage - Collector Emitter Breakdown.Maximum collector currents can be below 8A volts.

CP127-2N6301-CT Features


the DC current gain for this device is 750 @ 4A 3V
the vce saturation(Max) is 3V @ 80mA, 8A
the supplier device package of Die

CP127-2N6301-CT Applications


There are a lot of Central Semiconductor Corp CP127-2N6301-CT applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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