CP127-2N6301-CT datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CP127-2N6301-CT Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2017
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 4A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
3V @ 80mA, 8A
Collector Emitter Breakdown Voltage
80V
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
8A
Frequency - Transition
4MHz
RoHS Status
ROHS3 Compliant
CP127-2N6301-CT Product Details
CP127-2N6301-CT Overview
This device has a DC current gain of 750 @ 4A 3V, which is the ratio between the base current and the collector current.When VCE saturation is 3V @ 80mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Die is the supplier device package for this product.The device has a 80V maximal voltage - Collector Emitter Breakdown.Maximum collector currents can be below 8A volts.
CP127-2N6301-CT Features
the DC current gain for this device is 750 @ 4A 3V the vce saturation(Max) is 3V @ 80mA, 8A the supplier device package of Die
CP127-2N6301-CT Applications
There are a lot of Central Semiconductor Corp CP127-2N6301-CT applications of single BJT transistors.