2SA1576U3T106R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SA1576U3T106R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
200mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
150mA
Frequency - Transition
140MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.027192
$0.027192
500
$0.019994
$9.997
1000
$0.016662
$16.662
2000
$0.015285
$30.57
5000
$0.014286
$71.43
10000
$0.013289
$132.89
15000
$0.012852
$192.78
50000
$0.012638
$631.9
2SA1576U3T106R Product Details
2SA1576U3T106R Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2SA1576U3T106R Features
the DC current gain for this device is 120 @ 1mA 6V the vce saturation(Max) is 500mV @ 5mA, 50mA
2SA1576U3T106R Applications
There are a lot of ROHM Semiconductor 2SA1576U3T106R applications of single BJT transistors.