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2SA1774EBTLS

2SA1774EBTLS

2SA1774EBTLS

ROHM Semiconductor

2SA1774EBTLS datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SA1774EBTLS Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case SC
Number of Pins 3
PackagingTape & Reel (TR)
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature150°C
Max Power Dissipation150mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Polarity PNP
Element ConfigurationSingle
Gain Bandwidth Product140MHz
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 150mA
Collector Emitter Breakdown Voltage50V
Transition Frequency 140MHz
Collector Emitter Saturation Voltage-500mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -6V
hFE Min 120
Continuous Collector Current -150mA
RoHS StatusROHS3 Compliant
In-Stock:1641 items

Pricing & Ordering

QuantityUnit PriceExt. Price

2SA1774EBTLS Product Details

2SA1774EBTLS Overview


A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Single BJT transistor is recommended to keep the continuous collector voltage at -150mA in order to achieve high efficiency.An emitter's base voltage can be kept at -6V to gain high efficiency.As a result, the part has a transition frequency of 140MHz.An input voltage of 50V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 150mA volts.

2SA1774EBTLS Features


a collector emitter saturation voltage of -500mV
the emitter base voltage is kept at -6V
a transition frequency of 140MHz

2SA1774EBTLS Applications


There are a lot of ROHM Semiconductor 2SA1774EBTLS applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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