2SA1774EBTLS datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SA1774EBTLS Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Package / Case
SC
Number of Pins
3
Packaging
Tape & Reel (TR)
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Operating Temperature
150°C
Max Power Dissipation
150mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Polarity
PNP
Element Configuration
Single
Gain Bandwidth Product
140MHz
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
150mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
140MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-6V
hFE Min
120
Continuous Collector Current
-150mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2SA1774EBTLS Product Details
2SA1774EBTLS Overview
A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Single BJT transistor is recommended to keep the continuous collector voltage at -150mA in order to achieve high efficiency.An emitter's base voltage can be kept at -6V to gain high efficiency.As a result, the part has a transition frequency of 140MHz.An input voltage of 50V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 150mA volts.
2SA1774EBTLS Features
a collector emitter saturation voltage of -500mV the emitter base voltage is kept at -6V a transition frequency of 140MHz
2SA1774EBTLS Applications
There are a lot of ROHM Semiconductor 2SA1774EBTLS applications of single BJT transistors.