BC546C B1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
BC546C B1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2017
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
500mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Voltage - Collector Emitter Breakdown (Max)
65V
Current - Collector (Ic) (Max)
100mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BC546C B1G Product Details
BC546C B1G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Product package TO-92 comes from the supplier.This device displays a 65V maximum voltage - Collector Emitter Breakdown.
BC546C B1G Features
the DC current gain for this device is 420 @ 2mA 5V the supplier device package of TO-92
BC546C B1G Applications
There are a lot of Taiwan Semiconductor Corporation BC546C B1G applications of single BJT transistors.