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2SA1862TLP

2SA1862TLP

2SA1862TLP

ROHM Semiconductor

2SA1862TLP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SA1862TLP Datasheet

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Specifications
Name Value
Type Parameter
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1999
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Copper (Sn98Cu2)
HTS Code 8541.29.00.95
Subcategory Other Transistors
Voltage - Rated DC -600V
Max Power Dissipation 1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SA1862
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power - Max 1W
Transistor Application SWITCHING
Gain Bandwidth Product 120MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 100mA 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 500mA
Collector Emitter Breakdown Voltage 400V
Transition Frequency 18MHz
Collector Emitter Saturation Voltage 350mV
Max Breakdown Voltage 400V
Frequency - Transition 18MHz
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -6V
hFE Min 82
Continuous Collector Current -2A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.217353 $0.217353
10 $0.205049 $2.05049
100 $0.193443 $19.3443
500 $0.182494 $91.247
1000 $0.172164 $172.164
2SA1862TLP Product Details

2SA1862TLP Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 82 @ 100mA 5V.As it features a collector emitter saturation voltage of 350mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 500mA.Continuous collector voltage should be kept at -2A for high efficiency.The emitter base voltage can be kept at -6V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).The part has a transition frequency of 18MHz.Breakdown input voltage is 400V volts.Collector current can be as low as 2A volts at its maximum.

2SA1862TLP Features


the DC current gain for this device is 82 @ 100mA 5V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 500mV @ 100mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 18MHz

2SA1862TLP Applications


There are a lot of ROHM Semiconductor 2SA1862TLP applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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