2SA1862TLP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SA1862TLP Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1999
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin/Copper (Sn98Cu2)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Voltage - Rated DC
-600V
Max Power Dissipation
1W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SA1862
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power - Max
1W
Transistor Application
SWITCHING
Gain Bandwidth Product
120MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
82 @ 100mA 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 500mA
Collector Emitter Breakdown Voltage
400V
Transition Frequency
18MHz
Collector Emitter Saturation Voltage
350mV
Max Breakdown Voltage
400V
Frequency - Transition
18MHz
Collector Base Voltage (VCBO)
-30V
Emitter Base Voltage (VEBO)
-6V
hFE Min
82
Continuous Collector Current
-2A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.217353
$0.217353
10
$0.205049
$2.05049
100
$0.193443
$19.3443
500
$0.182494
$91.247
1000
$0.172164
$172.164
2SA1862TLP Product Details
2SA1862TLP Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 82 @ 100mA 5V.As it features a collector emitter saturation voltage of 350mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 500mA.Continuous collector voltage should be kept at -2A for high efficiency.The emitter base voltage can be kept at -6V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).The part has a transition frequency of 18MHz.Breakdown input voltage is 400V volts.Collector current can be as low as 2A volts at its maximum.
2SA1862TLP Features
the DC current gain for this device is 82 @ 100mA 5V a collector emitter saturation voltage of 350mV the vce saturation(Max) is 500mV @ 100mA, 500mA the emitter base voltage is kept at -6V the current rating of this device is -1A a transition frequency of 18MHz
2SA1862TLP Applications
There are a lot of ROHM Semiconductor 2SA1862TLP applications of single BJT transistors.