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2SARA41CT116S

2SARA41CT116S

2SARA41CT116S

ROHM Semiconductor

2SARA41CT116S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SARA41CT116S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 200MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.44000 $0.44
500 $0.4356 $217.8
1000 $0.4312 $431.2
1500 $0.4268 $640.2
2000 $0.4224 $844.8
2500 $0.418 $1045
2SARA41CT116S Product Details

2SARA41CT116S Overview


DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.There is a 45V maximal voltage in the device due to collector-emitter breakdown.

2SARA41CT116S Features


the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA

2SARA41CT116S Applications


There are a lot of ROHM Semiconductor 2SARA41CT116S applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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