PDTA143EMB,315 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PDTA143EMB,315 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation
250mW
Terminal Position
BOTTOM
Base Part Number
PDTA143
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
150mV
Max Collector Current
1μA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
50V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
180MHz
Frequency - Transition
180MHz
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.451899
$0.451899
10
$0.426320
$4.2632
100
$0.402189
$40.2189
500
$0.379423
$189.7115
1000
$0.357946
$357.946
PDTA143EMB,315 Product Details
PDTA143EMB,315 Overview
This device has a DC current gain of 30 @ 10mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 150mV @ 500μA, 10mA means Ic has reached its maximum value(saturated).Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.Collector current can be as low as 1μA volts at its maximum.
PDTA143EMB,315 Features
the DC current gain for this device is 30 @ 10mA 5V the vce saturation(Max) is 150mV @ 500μA, 10mA a transition frequency of 180MHz
PDTA143EMB,315 Applications
There are a lot of Nexperia USA Inc. PDTA143EMB,315 applications of single BJT transistors.