2SB1181TLR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SB1181TLR Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
TIN COPPER
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
1W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SB1181
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power - Max
10W
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
-80V
Emitter Base Voltage (VEBO)
5V
hFE Min
180
Continuous Collector Current
-1A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.129978
$0.129978
10
$0.122621
$1.22621
100
$0.115680
$11.568
500
$0.109132
$54.566
1000
$0.102955
$102.955
2SB1181TLR Product Details
2SB1181TLR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 3V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at -1A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.This device can take an input voltage of 80V volts before it breaks down.Maximum collector currents can be below 1A volts.
2SB1181TLR Features
the DC current gain for this device is 120 @ 100mA 3V the vce saturation(Max) is 400mV @ 50mA, 500mA the emitter base voltage is kept at 5V the current rating of this device is -1A
2SB1181TLR Applications
There are a lot of ROHM Semiconductor 2SB1181TLR applications of single BJT transistors.