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2SB1181TLR

2SB1181TLR

2SB1181TLR

ROHM Semiconductor

2SB1181TLR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SB1181TLR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e2
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN COPPER
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation1W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-1A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SB1181
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Power - Max 10W
Transistor Application SWITCHING
Gain Bandwidth Product100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage80V
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) 5V
hFE Min 180
Continuous Collector Current -1A
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4160 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.129978$0.129978
10$0.122621$1.22621
100$0.115680$11.568
500$0.109132$54.566
1000$0.102955$102.955

2SB1181TLR Product Details

2SB1181TLR Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 3V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at -1A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.This device can take an input voltage of 80V volts before it breaks down.Maximum collector currents can be below 1A volts.

2SB1181TLR Features


the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A

2SB1181TLR Applications


There are a lot of ROHM Semiconductor 2SB1181TLR applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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