2SA1954BTE85LF

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Manufacturer part number:2SA1954BTE85LF

Manufacturer:Toshiba Semiconductor and Storage

Description:Bipolar Transistors - BJT PNP Trans -0.5A LN -12V VCEO

Case Package:SOT-23

Datasheet:2SA1954BTE85LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM
Operating Temperature	125°C TJ
Packaging	Cut Tape (CT)
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	100mW
Polarity	PNP
Element Configuration	Single
Power - Max	100mW
Gain Bandwidth Product	130MHz
Transistor Type	PNP
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	500 @ 10mA 2V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 200mA
Collector Emitter Breakdown Voltage	12V
Voltage - Collector Emitter Breakdown (Max)	12V
Current - Collector (Ic) (Max)	500mA
Collector Emitter Saturation Voltage	-110mV
Max Breakdown Voltage	12V
Frequency - Transition	130MHz
Collector Base Voltage (VCBO)	-15V
Emitter Base Voltage (VEBO)	-5V
hFE Min	300
RoHS Status	RoHS Compliant