2SB1412TLP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SB1412TLP Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Copper (Sn98Cu2)
HTS Code
8541.29.00.75
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Max Power Dissipation
1W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-5A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SB1412
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Gain Bandwidth Product
120MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
82 @ 500mA 2V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 4A
Collector Emitter Breakdown Voltage
20V
Current - Collector (Ic) (Max)
5A
Transition Frequency
120MHz
Collector Base Voltage (VCBO)
-20V
Emitter Base Voltage (VEBO)
6V
hFE Min
82
Continuous Collector Current
-5A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.810880
$3.81088
10
$3.595170
$35.9517
100
$3.391670
$339.167
500
$3.199688
$1599.844
1000
$3.018574
$3018.574
2SB1412TLP Product Details
2SB1412TLP Overview
DC current gain in this device equals 82 @ 500mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 100mA, 4A.Continuous collector voltages of -5A should be maintained to achieve high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 120MHz in the part.During maximum operation, collector current can be as low as 5A volts.
2SB1412TLP Features
the DC current gain for this device is 82 @ 500mA 2V the vce saturation(Max) is 1V @ 100mA, 4A the emitter base voltage is kept at 6V the current rating of this device is -5A a transition frequency of 120MHz
2SB1412TLP Applications
There are a lot of ROHM Semiconductor 2SB1412TLP applications of single BJT transistors.