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2SB1412TLP

2SB1412TLP

2SB1412TLP

ROHM Semiconductor

2SB1412TLP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SB1412TLP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e2
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn98Cu2)
HTS Code8541.29.00.75
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation1W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-5A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SB1412
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Gain Bandwidth Product120MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 500mA 2V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 4A
Collector Emitter Breakdown Voltage20V
Current - Collector (Ic) (Max) 5A
Transition Frequency 120MHz
Collector Base Voltage (VCBO) -20V
Emitter Base Voltage (VEBO) 6V
hFE Min 82
Continuous Collector Current -5A
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1220 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.810880$3.81088
10$3.595170$35.9517
100$3.391670$339.167
500$3.199688$1599.844
1000$3.018574$3018.574

2SB1412TLP Product Details

2SB1412TLP Overview


DC current gain in this device equals 82 @ 500mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 100mA, 4A.Continuous collector voltages of -5A should be maintained to achieve high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 120MHz in the part.During maximum operation, collector current can be as low as 5A volts.

2SB1412TLP Features


the DC current gain for this device is 82 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is -5A
a transition frequency of 120MHz

2SB1412TLP Applications


There are a lot of ROHM Semiconductor 2SB1412TLP applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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