2SB1561T100Q Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 50mA, 1A.A -2A continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at -6V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 200MHz.Input voltage breakdown is available at 60V volts.A maximum collector current of 2A volts is possible.

2SB1561T100Q Features

the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -2A
a transition frequency of 200MHz

2SB1561T100Q Applications

There are a lot of ROHM Semiconductor 2SB1561T100Q applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter