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2SB1561T100Q

2SB1561T100Q

2SB1561T100Q

ROHM Semiconductor

2SB1561T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SB1561T100Q Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 1998
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation500mW
Terminal FormFLAT
Current Rating-2A
Base Part Number 2SB1561
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation500mW
Case Connection COLLECTOR
Power - Max 2W
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 350mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 1A
Collector Emitter Breakdown Voltage60V
Transition Frequency 200MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -6V
hFE Min 120
Continuous Collector Current -2A
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2087 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.174720$0.17472
10$0.164830$1.6483
100$0.155500$15.55
500$0.146698$73.349
1000$0.138395$138.395

2SB1561T100Q Product Details

2SB1561T100Q Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 50mA, 1A.A -2A continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at -6V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 200MHz.Input voltage breakdown is available at 60V volts.A maximum collector current of 2A volts is possible.

2SB1561T100Q Features


the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -2A
a transition frequency of 200MHz

2SB1561T100Q Applications


There are a lot of ROHM Semiconductor 2SB1561T100Q applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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