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BC489BZL1G

BC489BZL1G

BC489BZL1G

ON Semiconductor

BC489BZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC489BZL1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureEUROPEAN PART NUMBER
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC489
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Transistor Application SWITCHING
Gain Bandwidth Product200MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 100mA, 1A
Collector Emitter Breakdown Voltage80V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage300mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Continuous Collector Current 500mA
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3581 items

BC489BZL1G Product Details

BC489BZL1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 100mA, 1A.Maintaining the continuous collector voltage at 500mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.In extreme cases, the collector current can be as low as 500mA volts.

BC489BZL1G Features


the DC current gain for this device is 160 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 200MHz

BC489BZL1G Applications


There are a lot of ON Semiconductor BC489BZL1G applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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