2SC4081T106S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SC4081T106S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount, Through Hole
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
50V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
150mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SC4081
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
180MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
180MHz
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
7V
hFE Min
120
Continuous Collector Current
150mA
VCEsat-Max
0.4 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.028158
$0.028158
500
$0.020704
$10.352
1000
$0.017253
$17.253
2000
$0.015829
$31.658
5000
$0.014794
$73.97
10000
$0.013761
$137.61
15000
$0.013309
$199.635
50000
$0.013086
$654.3
2SC4081T106S Product Details
2SC4081T106S Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 150mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 150mA.The part has a transition frequency of 180MHz.A breakdown input voltage of 50V volts can be used.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2SC4081T106S Features
the DC current gain for this device is 120 @ 1mA 6V the vce saturation(Max) is 400mV @ 5mA, 50mA the emitter base voltage is kept at 7V the current rating of this device is 150mA a transition frequency of 180MHz
2SC4081T106S Applications
There are a lot of ROHM Semiconductor 2SC4081T106S applications of single BJT transistors.