2N4123TFR Overview

In this device, the DC current gain is 50 @ 2mA 1V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is 200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The maximum collector current is 200mA volts.

2N4123TFR Features

the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA

2N4123TFR Applications

There are a lot of ON Semiconductor 2N4123TFR applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver