2SC4672T100P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SC4672T100P Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN COPPER
Subcategory
Other Transistors
Voltage - Rated DC
50V
Max Power Dissipation
500mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
3A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SC4672
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
210MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
82 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
50V
Current - Collector (Ic) (Max)
2A
Transition Frequency
210MHz
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
82
VCEsat-Max
0.35 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.060640
$0.06064
500
$0.044588
$22.294
1000
$0.037157
$37.157
2000
$0.034089
$68.178
5000
$0.031859
$159.295
10000
$0.029636
$296.36
15000
$0.028662
$429.93
50000
$0.028182
$1409.1
2SC4672T100P Product Details
2SC4672T100P Overview
DC current gain in this device equals 82 @ 500mA 2V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 350mV @ 50mA, 1A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 210MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SC4672T100P Features
the DC current gain for this device is 82 @ 500mA 2V the vce saturation(Max) is 350mV @ 50mA, 1A the emitter base voltage is kept at 6V the current rating of this device is 3A a transition frequency of 210MHz
2SC4672T100P Applications
There are a lot of ROHM Semiconductor 2SC4672T100P applications of single BJT transistors.