BC373RL1G Overview

In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1.1V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.1V @ 250μA, 250mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.The breakdown input voltage is 80V volts.A maximum collector current of 1A volts can be achieved.

BC373RL1G Features

the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 250μA, 250mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 200MHz

BC373RL1G Applications

There are a lot of ON Semiconductor BC373RL1G applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter