2SC5876T106R Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 50mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 150mV.When VCE saturation is 300mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.Parts of this part have transition frequencies of 300MHz.Breakdown input voltage is 60V volts.A maximum collector current of 500mA volts can be achieved.

2SC5876T106R Features

the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 300MHz

2SC5876T106R Applications

There are a lot of ROHM Semiconductor 2SC5876T106R applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface