MPSA56RLRAG Overview

In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.Emitter base voltages of 4V can achieve high levels of efficiency.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor can be broken down at a voltage of 80V volts.During maximum operation, collector current can be as low as 500mA volts.

MPSA56RLRAG Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz

MPSA56RLRAG Applications

There are a lot of ON Semiconductor MPSA56RLRAG applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter