2SCR293PFRAT100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SCR293PFRAT100 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Published
2016
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
500mW
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
500mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage
30V
Current - Collector (Ic) (Max)
1A
Transition Frequency
320MHz
Frequency - Transition
320MHz
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.11520
$0.1152
2SCR293PFRAT100 Product Details
2SCR293PFRAT100 Overview
This device has a DC current gain of 270 @ 100mA 2V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 25mA, 500mA.As a result, the part has a transition frequency of 320MHz.
2SCR293PFRAT100 Features
the DC current gain for this device is 270 @ 100mA 2V the vce saturation(Max) is 350mV @ 25mA, 500mA a transition frequency of 320MHz
2SCR293PFRAT100 Applications
There are a lot of ROHM Semiconductor 2SCR293PFRAT100 applications of single BJT transistors.