2SCR502U3HZGT106 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SCR502U3HZGT106 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE
Power - Max
200mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
200nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 200mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
360MHz
Frequency - Transition
360MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.317000
$0.317
10
$0.299057
$2.99057
100
$0.282129
$28.2129
500
$0.266159
$133.0795
1000
$0.251094
$251.094
2SCR502U3HZGT106 Product Details
2SCR502U3HZGT106 Overview
DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.As a result, the part has a transition frequency of 360MHz.The device has a 30V maximal voltage - Collector Emitter Breakdown.
2SCR502U3HZGT106 Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 300mV @ 10mA, 200mA a transition frequency of 360MHz
2SCR502U3HZGT106 Applications
There are a lot of ROHM Semiconductor 2SCR502U3HZGT106 applications of single BJT transistors.