2SCR543DTL Overview

In this device, the DC current gain is 180 @ 100mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 130mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 100mA, 2A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.300MHz is present in the transition frequency.Collector current can be as low as 4A volts at its maximum.

2SCR543DTL Features

the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 350mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

2SCR543DTL Applications

There are a lot of ROHM Semiconductor 2SCR543DTL applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting