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FJC1386RTF

FJC1386RTF

FJC1386RTF

ON Semiconductor

FJC1386RTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJC1386RTF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package SOT-89-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 500mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA 2V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 4A
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 5A
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.958070 $0.95807
10 $0.903840 $9.0384
100 $0.852679 $85.2679
500 $0.804414 $402.207
1000 $0.758881 $758.881
FJC1386RTF Product Details

FJC1386RTF Overview


In this device, the DC current gain is 180 @ 500mA 2V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100mA, 4A.Supplier package SOT-89-3 contains the product.Device displays Collector Emitter Breakdown (20V maximal voltage).

FJC1386RTF Features


the DC current gain for this device is 180 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the supplier device package of SOT-89-3

FJC1386RTF Applications


There are a lot of ON Semiconductor FJC1386RTF applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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