FJC1386RTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJC1386RTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
SOT-89-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
500mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 500mA 2V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 4A
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
5A
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.958070
$0.95807
10
$0.903840
$9.0384
100
$0.852679
$85.2679
500
$0.804414
$402.207
1000
$0.758881
$758.881
FJC1386RTF Product Details
FJC1386RTF Overview
In this device, the DC current gain is 180 @ 500mA 2V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100mA, 4A.Supplier package SOT-89-3 contains the product.Device displays Collector Emitter Breakdown (20V maximal voltage).
FJC1386RTF Features
the DC current gain for this device is 180 @ 500mA 2V the vce saturation(Max) is 1V @ 100mA, 4A the supplier device package of SOT-89-3
FJC1386RTF Applications
There are a lot of ON Semiconductor FJC1386RTF applications of single BJT transistors.