2SC2413KT146Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SC2413KT146Q Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
25V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
50mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SC2413
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 6V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
25V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
100mV
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
hFE Min
82
Continuous Collector Current
50mA
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.305600
$5.3056
10
$5.005283
$50.05283
100
$4.721965
$472.1965
500
$4.454684
$2227.342
1000
$4.202532
$4202.532
2SC2413KT146Q Product Details
2SC2413KT146Q Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 100mV, it allows for maximum design flexibility.A VCE saturation (Max) of 300mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A constant collector voltage of 50mA is necessary for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is 50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.There is a breakdown input voltage of 25V volts that it can take.During maximum operation, collector current can be as low as 50mA volts.
2SC2413KT146Q Features
the DC current gain for this device is 120 @ 1mA 6V a collector emitter saturation voltage of 100mV the vce saturation(Max) is 300mV @ 1mA, 10mA the emitter base voltage is kept at 5V the current rating of this device is 50mA a transition frequency of 300MHz
2SC2413KT146Q Applications
There are a lot of ROHM Semiconductor 2SC2413KT146Q applications of single BJT transistors.