2SD1733TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SD1733TLQ Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Copper (Sn98Cu2)
HTS Code
8541.29.00.75
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
1W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD1733
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 20mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
150mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
hFE Min
120
Continuous Collector Current
1A
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.127928
$0.127928
10
$0.120687
$1.20687
100
$0.113855
$11.3855
500
$0.107410
$53.705
1000
$0.101331
$101.331
2SD1733TLQ Product Details
2SD1733TLQ Overview
In this device, the DC current gain is 120 @ 500mA 3V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 150mV ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 1A is necessary for high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.The part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 80V volts.Collector current can be as low as 1A volts at its maximum.
2SD1733TLQ Features
the DC current gain for this device is 120 @ 500mA 3V a collector emitter saturation voltage of 150mV the vce saturation(Max) is 400mV @ 20mA, 500mA the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 100MHz
2SD1733TLQ Applications
There are a lot of ROHM Semiconductor 2SD1733TLQ applications of single BJT transistors.