2SD1733TLQ Overview
In this device, the DC current gain is 120 @ 500mA 3V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 150mV ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 1A is necessary for high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.The part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 80V volts.Collector current can be as low as 1A volts at its maximum.
2SD1733TLQ Features
the DC current gain for this device is 120 @ 500mA 3V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
2SD1733TLQ Applications
There are a lot of ROHM Semiconductor 2SD1733TLQ applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
