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2SD2150T100R

2SD2150T100R

2SD2150T100R

ROHM Semiconductor

2SD2150T100R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

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2SD2150T100R Datasheet

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Specifications
Name Value
Type Parameter
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN COPPER
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 20V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 3A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2150
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 290MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 100mA 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 2A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 290MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 6V
hFE Min 120
Continuous Collector Current 3A
VCEsat-Max 0.5 V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.239040 $0.23904
10 $0.225509 $2.25509
100 $0.212745 $21.2745
500 $0.200703 $100.3515
1000 $0.189342 $189.342
2SD2150T100R Product Details

2SD2150T100R Overview


This device has a DC current gain of 180 @ 100mA 2V, which is the ratio between the base current and the collector current.When VCE saturation is 500mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).A constant collector voltage of 3A is necessary for high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 290MHz in the part.This device can take an input voltage of 20V volts before it breaks down.Collector current can be as low as 3A volts at its maximum.

2SD2150T100R Features


the DC current gain for this device is 180 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 290MHz

2SD2150T100R Applications


There are a lot of ROHM Semiconductor 2SD2150T100R applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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