2SD2150T100R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SD2150T100R Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN COPPER
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
20V
Max Power Dissipation
500mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
3A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD2150
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
290MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 100mA 2V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
290MHz
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
6V
hFE Min
120
Continuous Collector Current
3A
VCEsat-Max
0.5 V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.239040
$0.23904
10
$0.225509
$2.25509
100
$0.212745
$21.2745
500
$0.200703
$100.3515
1000
$0.189342
$189.342
2SD2150T100R Product Details
2SD2150T100R Overview
This device has a DC current gain of 180 @ 100mA 2V, which is the ratio between the base current and the collector current.When VCE saturation is 500mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).A constant collector voltage of 3A is necessary for high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 290MHz in the part.This device can take an input voltage of 20V volts before it breaks down.Collector current can be as low as 3A volts at its maximum.
2SD2150T100R Features
the DC current gain for this device is 180 @ 100mA 2V the vce saturation(Max) is 500mV @ 100mA, 2A the emitter base voltage is kept at 6V the current rating of this device is 3A a transition frequency of 290MHz
2SD2150T100R Applications
There are a lot of ROHM Semiconductor 2SD2150T100R applications of single BJT transistors.