2SD2150T100R Overview
This device has a DC current gain of 180 @ 100mA 2V, which is the ratio between the base current and the collector current.When VCE saturation is 500mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).A constant collector voltage of 3A is necessary for high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 290MHz in the part.This device can take an input voltage of 20V volts before it breaks down.Collector current can be as low as 3A volts at its maximum.
2SD2150T100R Features
the DC current gain for this device is 180 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 290MHz
2SD2150T100R Applications
There are a lot of ROHM Semiconductor 2SD2150T100R applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
