2SD1766T100Q Overview

In this device, the DC current gain is 120 @ 500mA 3V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 100MHz is present in the part.The breakdown input voltage is 32V volts.A maximum collector current of 2A volts can be achieved.

2SD1766T100Q Features

the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz

2SD1766T100Q Applications

There are a lot of ROHM Semiconductor 2SD1766T100Q applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting