BD746A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD746A-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
JESD-609 Code
e1
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Max Power Dissipation
3.5W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BD746
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
115W
Case Connection
COLLECTOR
Power - Max
3.5W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
20A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5A 4V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
3V @ 5A, 20A
Collector Emitter Breakdown Voltage
60V
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
BD746A-S Product Details
BD746A-S Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 5A 4V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 5A, 20A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible to have a collector current as low as 20A volts at Single BJT transistors maximum.
BD746A-S Features
the DC current gain for this device is 20 @ 5A 4V the vce saturation(Max) is 3V @ 5A, 20A the emitter base voltage is kept at 5V
BD746A-S Applications
There are a lot of Bourns Inc. BD746A-S applications of single BJT transistors.