2SD1963T100R Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 450mV @ 150mA, 1.5A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.Parts of this part have transition frequencies of 150MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SD1963T100R Features
the DC current gain for this device is 180 @ 500mA 2V
the vce saturation(Max) is 450mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 150MHz
2SD1963T100R Applications
There are a lot of ROHM Semiconductor 2SD1963T100R applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
