2N5401TAR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 10mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is no device package available from the supplier for this product.Device displays Collector Emitter Breakdown (150V maximal voltage).In extreme cases, the collector current can be as low as 600mA volts.
2N5401TAR Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
the supplier device package of TO-92-3
2N5401TAR Applications
There are a lot of ON Semiconductor 2N5401TAR applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
