2SD2170T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SD2170T100 Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN COPPER
Additional Feature
BUILT-IN BIAS RESISTOR
Subcategory
Other Transistors
Voltage - Rated DC
90V
Max Power Dissipation
2W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
2A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD2170
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
500mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
80MHz
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
110V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1A 2V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1mA, 1A
Collector Emitter Breakdown Voltage
90V
Transition Frequency
80MHz
Max Breakdown Voltage
90V
Collector Base Voltage (VCBO)
110V
Emitter Base Voltage (VEBO)
6V
hFE Min
1000
Continuous Collector Current
2A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.196920
$0.19692
10
$0.185774
$1.85774
100
$0.175258
$17.5258
500
$0.165338
$82.669
1000
$0.155979
$155.979
2SD2170T100 Product Details
2SD2170T100 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 1A 2V.When VCE saturation is 1.5V @ 1mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 2A in order to achieve high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 80MHz.A breakdown input voltage of 90V volts can be used.Collector current can be as low as 2A volts at its maximum.
2SD2170T100 Features
the DC current gain for this device is 1000 @ 1A 2V the vce saturation(Max) is 1.5V @ 1mA, 1A the emitter base voltage is kept at 6V the current rating of this device is 2A a transition frequency of 80MHz
2SD2170T100 Applications
There are a lot of ROHM Semiconductor 2SD2170T100 applications of single BJT transistors.