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2SD2211T100Q

2SD2211T100Q

2SD2211T100Q

ROHM Semiconductor

2SD2211T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD2211T100Q Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 1999
JESD-609 Code e2
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN COPPER
Subcategory Other Transistors
Voltage - Rated DC 160V
Max Power Dissipation2W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating1.5A
[email protected] Reflow Temperature-Max (s) 10
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product80MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 100mA, 1A
Collector Emitter Breakdown Voltage160V
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Continuous Collector Current 1.5A
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1444 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.059040$0.05904
500$0.043412$21.706
1000$0.036176$36.176
2000$0.033189$66.378
5000$0.031018$155.09
10000$0.028854$288.54
15000$0.027905$418.575
50000$0.027439$1371.95

2SD2211T100Q Product Details

2SD2211T100Q Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 100mA, 1A.A 1.5A continuous collector voltage is necessary to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.When collector current reaches its maximum, it can reach 1.5A volts.

2SD2211T100Q Features


the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A

2SD2211T100Q Applications


There are a lot of ROHM Semiconductor 2SD2211T100Q applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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