2SD2211T100Q Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 100mA, 1A.A 1.5A continuous collector voltage is necessary to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.When collector current reaches its maximum, it can reach 1.5A volts.

2SD2211T100Q Features

the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A

2SD2211T100Q Applications

There are a lot of ROHM Semiconductor 2SD2211T100Q applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver