TIPL765A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIPL765A-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
125W
Base Part Number
TIPL765
Polarity
NPN
Power - Max
125W
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
2.5V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 500mA 5V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 2A, 10A
Collector Emitter Breakdown Voltage
450V
Voltage - Collector Emitter Breakdown (Max)
450V
Current - Collector (Ic) (Max)
10A
RoHS Status
ROHS3 Compliant
TIPL765A-S Product Details
TIPL765A-S Overview
This device has a DC current gain of 60 @ 500mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Supplier package SOT-93 contains the product.There is a 450V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
TIPL765A-S Features
the DC current gain for this device is 60 @ 500mA 5V the vce saturation(Max) is 2.5V @ 2A, 10A the supplier device package of SOT-93
TIPL765A-S Applications
There are a lot of Bourns Inc. TIPL765A-S applications of single BJT transistors.