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TIPL765A-S

TIPL765A-S

TIPL765A-S

Bourns Inc.

TIPL765A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIPL765A-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Supplier Device Package SOT-93
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation125W
Base Part Number TIPL765
Polarity NPN
Power - Max 125W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 500mA 5V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 2A, 10A
Collector Emitter Breakdown Voltage450V
Voltage - Collector Emitter Breakdown (Max) 450V
Current - Collector (Ic) (Max) 10A
RoHS StatusROHS3 Compliant
In-Stock:4508 items

TIPL765A-S Product Details

TIPL765A-S Overview


This device has a DC current gain of 60 @ 500mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Supplier package SOT-93 contains the product.There is a 450V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.

TIPL765A-S Features


the DC current gain for this device is 60 @ 500mA 5V
the vce saturation(Max) is 2.5V @ 2A, 10A
the supplier device package of SOT-93

TIPL765A-S Applications


There are a lot of Bourns Inc. TIPL765A-S applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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